Fragile‐to‐Strong Transition in Phase‐Change Material Ge ₃ Sb ₆ Te ₅

Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge₂Sb₂Te₅ phase-change memory material.

Ge(2)Sb(2)Te(5) (GST) is a technologically very important phase-change material that is used in digital versatile disks-random access memory and is currently studied for the use in phase-change random access memory devices. This type of data storage is achieved by the fast reversible phase transition between amorphous and crystalline GST upon heat pulse. Here we report pressure-induced reversib...

Atomistic origins of the phase transition mechanism in Ge(2)Sb(2)Te(5)

Structural Patterns in Ge/Sb/Te Phase-Change Materials

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STRUCTURAL STUDY OF SILVER PHOTODOPED Ge-Sb-Te FILMS

The migration of various metals (pre-dominantly, Ag, Cu, Zn) in amorphous chalcogenides under exposure of light has been studied for many years [1-4]. This effect is a characteristic of chalcogenide amorphous semiconductors when metals are deposited on films of these materials. Diffusion of metal into the film occurs by means of light irradiation mainly visible (near bandgap) light. The effect ...

LOCAL STRUCTURE OF Ge-Sb-Te AND ITS MODIFICATION UPON THE PHASE TRANSITION

Center for Applied Near-Field Optics Research, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan Department of Physics, Yeshiva University, 245 Lexington Avenue, New York, NY 10016, USA Department of Physics, Box 351560, University of Washington, Seattle, WA 98195, USA SPring-8, Japan Synchrotron Radiation Resear...